Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N6299
Manufacturer Part Number | JAN2N6299 |
---|---|
Future Part Number | FT-JAN2N6299 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/540 |
JAN2N6299 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Darlington |
Current - Collector (Ic) (Max) | 8A |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 16mA, 4A |
Current - Collector Cutoff (Max) | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
Power - Max | 64W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-213AA, TO-66-2 |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N6299 Weight | Contact Us |
Replacement Part Number | JAN2N6299-FT |
JANTX2N2906A
Microsemi Corporation
JANS2N2907A
Microsemi Corporation
JAN2N2222AL
Microsemi Corporation
JAN2N2906A
Microsemi Corporation
JAN2N930
Microsemi Corporation
JANTX2N2369A
Microsemi Corporation
JANTX2N4029
Microsemi Corporation
JANTX2N720A
Microsemi Corporation
JANTXV2N2222AL
Microsemi Corporation
JANTXV2N2906A
Microsemi Corporation
A54SX16A-2FG256I
Microsemi Corporation
LCMXO640E-3FTN256I
Lattice Semiconductor Corporation
EP2C50F672C7N
Intel
EP3C5U256C7
Intel
5SGXEA9N3F45C2N
Intel
XC7VX485T-3FFG1157E
Xilinx Inc.
XC2V8000-5FFG1152I
Xilinx Inc.
LCMXO3L-9400E-5BG256C
Lattice Semiconductor Corporation
EP3SL50F780C3
Intel
EP1C4F400I7N
Intel