Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N6250
Manufacturer Part Number | JAN2N6250 |
---|---|
Future Part Number | FT-JAN2N6250 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/510 |
JAN2N6250 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 10A |
Voltage - Collector Emitter Breakdown (Max) | 275V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.25A, 10A |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 10A, 3V |
Power - Max | 6W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-3 |
Supplier Device Package | TO-3 (TO-204AA) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N6250 Weight | Contact Us |
Replacement Part Number | JAN2N6250-FT |
FJZ733GTF
ON Semiconductor
FJZ733LTF
ON Semiconductor
FJZ733OTF
ON Semiconductor
FJZ733RTF
ON Semiconductor
FJZ733YTF
ON Semiconductor
FJZ945GTF
ON Semiconductor
FJZ945LTF
ON Semiconductor
FJZ945OTF
ON Semiconductor
FJZ945YTF
ON Semiconductor
FMS1AT148
Rohm Semiconductor
XC6SLX100-3FG484I
Xilinx Inc.
A3P1000-2PQG208
Microsemi Corporation
5SGXEA5N2F45C2LN
Intel
5SGXMABK3H40C2LN
Intel
EP1AGX60EF1152I6N
Intel
EP3SL200F1152I4N
Intel
XC7K325T-2FFG900I
Xilinx Inc.
LFE3-70EA-7LFN1156C
Lattice Semiconductor Corporation
10AX057H2F34E1SG
Intel
EP4SGX180FF35C2X
Intel