Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / JAN2N4957
Manufacturer Part Number | JAN2N4957 |
---|---|
Future Part Number | FT-JAN2N4957 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
JAN2N4957 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | 3.5dB @ 450MHz |
Gain | 25dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
Current - Collector (Ic) (Max) | 30mA |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-72-3 Metal Can |
Supplier Device Package | TO-72 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N4957 Weight | Contact Us |
Replacement Part Number | JAN2N4957-FT |
58048
Microsemi Corporation
60099H
Microsemi Corporation
60158
Microsemi Corporation
60159
Microsemi Corporation
60168
Microsemi Corporation
60180
Microsemi Corporation
60189
Microsemi Corporation
60205
Microsemi Corporation
60206
Microsemi Corporation
61032Q
Microsemi Corporation
LFEC6E-5T144C
Lattice Semiconductor Corporation
A42MX36-2PQG240I
Microsemi Corporation
EP1K10TC100-2N
Intel
10M08DCV81C8G
Intel
EP4SE530H35C2
Intel
EP4SE820H35I4
Intel
LFXP2-30E-5FTN256C
Lattice Semiconductor Corporation
5CEBA9U19C8N
Intel
10AX090H3F34I2SG
Intel
EP4SGX110HF35I4N
Intel