Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N3999
Manufacturer Part Number | JAN2N3999 |
---|---|
Future Part Number | FT-JAN2N3999 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/374 |
JAN2N3999 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 10A |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 500mA, 5A |
Current - Collector Cutoff (Max) | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 2V |
Power - Max | 2W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Stud Mount |
Package / Case | TO-210AA, TO-59-4, Stud |
Supplier Device Package | TO-59 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N3999 Weight | Contact Us |
Replacement Part Number | JAN2N3999-FT |
JAN2N3499L
Microsemi Corporation
JAN2N3500
Microsemi Corporation
JAN2N3500L
Microsemi Corporation
JAN2N3635
Microsemi Corporation
JAN2N3635L
Microsemi Corporation
JAN2N3635UB
Microsemi Corporation
JAN2N3637
Microsemi Corporation
JAN2N3637L
Microsemi Corporation
JAN2N3637UB
Microsemi Corporation
JAN2N3737UB
Microsemi Corporation
EPF6024ATC144-2N
Intel
XC2VP2-5FG456I
Xilinx Inc.
A54SX32A-FFG144
Microsemi Corporation
10M50DAF256C8G
Intel
EP4SGX530KH40C3N
Intel
5SGXEA7K3F35I3N
Intel
XC5VLX50T-1FFG1136CES
Xilinx Inc.
XC7S6-2CPGA196I
Xilinx Inc.
A54SX08A-FTQG100
Microsemi Corporation
LFE3-35EA-6FN672C
Lattice Semiconductor Corporation