Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N3507
Manufacturer Part Number | JAN2N3507 |
---|---|
Future Part Number | FT-JAN2N3507 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/349 |
JAN2N3507 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 250mA, 2.5A |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 1.5A, 2V |
Power - Max | 1W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package | TO-39 (TO-205AD) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N3507 Weight | Contact Us |
Replacement Part Number | JAN2N3507-FT |
JAN2N2369AUA
Microsemi Corporation
JAN2N2369AUB
Microsemi Corporation
JAN2N2484UA
Microsemi Corporation
JAN2N2484UB
Microsemi Corporation
JAN2N2904
Microsemi Corporation
JAN2N2904A
Microsemi Corporation
JAN2N2904AL
Microsemi Corporation
JAN2N2905
Microsemi Corporation
JAN2N2906AUA
Microsemi Corporation
JAN2N2906AUB
Microsemi Corporation