Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N3507AL
Manufacturer Part Number | JAN2N3507AL |
---|---|
Future Part Number | FT-JAN2N3507AL |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/349 |
JAN2N3507AL Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 250mA, 2.5A |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 1.5A, 2V |
Power - Max | 1W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package | TO-5 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N3507AL Weight | Contact Us |
Replacement Part Number | JAN2N3507AL-FT |
JAN2N2484UA
Microsemi Corporation
JAN2N2484UB
Microsemi Corporation
JAN2N2904
Microsemi Corporation
JAN2N2904A
Microsemi Corporation
JAN2N2904AL
Microsemi Corporation
JAN2N2905
Microsemi Corporation
JAN2N2906AUA
Microsemi Corporation
JAN2N2906AUB
Microsemi Corporation
JAN2N2919
Microsemi Corporation
JAN2N3485A
Microsemi Corporation
XC4010XL-1TQ144I
Xilinx Inc.
AX250-FG256
Microsemi Corporation
LFE5UM-85F-6BG554I
Lattice Semiconductor Corporation
EP1K100FI484-2N
Intel
5SGSMD6K3F40C2N
Intel
5SGSMD5H3F35C4N
Intel
5SGXEA4K2F35C2LN
Intel
XC6VSX315T-L1FFG1156C
Xilinx Inc.
LFXP2-8E-7FT256C
Lattice Semiconductor Corporation
LFE3-35EA-8LFN484C
Lattice Semiconductor Corporation