Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N1893
Manufacturer Part Number | JAN2N1893 |
---|---|
Future Part Number | FT-JAN2N1893 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/182 |
JAN2N1893 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Vce Saturation (Max) @ Ib, Ic | 5V @ 15mA, 150mA |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
Power - Max | 800mW |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package | TO-5 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N1893 Weight | Contact Us |
Replacement Part Number | JAN2N1893-FT |
JAN2N3439
Microsemi Corporation
JAN2N2905A
Microsemi Corporation
JANTX2N3439
Microsemi Corporation
JANTX2N3440
Microsemi Corporation
JANTX2N4150S
Microsemi Corporation
JANTX2N5153
Microsemi Corporation
JANTXV2N3439
Microsemi Corporation
JANTXV2N3440
Microsemi Corporation
JANTXV2N6193
Microsemi Corporation
JANTXV2N3637
Microsemi Corporation
LCMXO2-1200ZE-1TG100CR1
Lattice Semiconductor Corporation
M1A3P1000-2FGG484
Microsemi Corporation
A3P1000-FG256
Microsemi Corporation
A3P600-2PQG208I
Microsemi Corporation
LFE5UM-85F-7BG554I
Lattice Semiconductor Corporation
EP20K600EFC672-3
Intel
5SGSED8K3F40C2LN
Intel
EP3SE80F1152I3
Intel
XA7A50T-1CSG324I
Xilinx Inc.
EPF10K200SBC356-1X
Intel