Home / Products / Circuit Protection / TVS - Diodes / JAN1N6132
Manufacturer Part Number | JAN1N6132 |
---|---|
Future Part Number | FT-JAN1N6132 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/516 |
JAN1N6132 Status (Lifecycle) | In Stock |
Part Status | Active |
Type | Zener |
Unidirectional Channels | - |
Bidirectional Channels | 1 |
Voltage - Reverse Standoff (Typ) | 91.2V |
Voltage - Breakdown (Min) | 108.3V |
Voltage - Clamping (Max) @ Ipp | 173.36V |
Current - Peak Pulse (10/1000µs) | 2.85A |
Power - Peak Pulse | 500W |
Power Line Protection | No |
Applications | General Purpose |
Capacitance @ Frequency | - |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | B, Axial |
Supplier Device Package | Axial |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN1N6132 Weight | Contact Us |
Replacement Part Number | JAN1N6132-FT |
JAN1N6107
Microsemi Corporation
JAN1N6107A
Microsemi Corporation
JAN1N6107AUS
Microsemi Corporation
JAN1N6107US
Microsemi Corporation
JAN1N6108
Microsemi Corporation
JAN1N6108A
Microsemi Corporation
JAN1N6108AUS
Microsemi Corporation
JAN1N6108US
Microsemi Corporation
JAN1N6109
Microsemi Corporation
JAN1N6109A
Microsemi Corporation
XC3S100E-5TQG144C
Xilinx Inc.
LCMXO2-1200ZE-3TG100IR1
Lattice Semiconductor Corporation
XC3S1000-5FG676C
Xilinx Inc.
M1AFS600-FG484K
Microsemi Corporation
APA600-BGG456M
Microsemi Corporation
EPF10K50EFC484-3N
Intel
EP2C15AF256C8N
Intel
5AGXMA1D4F27C5N
Intel
EP2SGX30CF780C3
Intel
EP4CE115F29C9LN
Intel