Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / JAN1N5816
Manufacturer Part Number | JAN1N5816 |
---|---|
Future Part Number | FT-JAN1N5816 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | MILITARY, MIL-PRF-19500/478 |
JAN1N5816 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 150V |
Current - Average Rectified (Io) | 20A |
Voltage - Forward (Vf) (Max) @ If | 950mV @ 20A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 35ns |
Current - Reverse Leakage @ Vr | 10µA @ 150V |
Capacitance @ Vr, F | 300pF @ 10V, 1MHz |
Mounting Type | Chassis, Stud Mount |
Package / Case | DO-203AA, DO-4, Stud |
Supplier Device Package | DO-203AA (DO-4) |
Operating Temperature - Junction | -65°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN1N5816 Weight | Contact Us |
Replacement Part Number | JAN1N5816-FT |
IRD3CH31DF6
Infineon Technologies
IRD3CH42DB6
Infineon Technologies
IRD3CH42DD6
Infineon Technologies
IRD3CH42DF6
Infineon Technologies
IRD3CH53DB6
Infineon Technologies
IRD3CH53DD6
Infineon Technologies
IRD3CH53DF6
Infineon Technologies
IRD3CH5BD6
Infineon Technologies
IRD3CH5DB6
Infineon Technologies
IRD3CH82DB6
Infineon Technologies
XCV1000E-6FG900I
Xilinx Inc.
A54SX72A-PQG208
Microsemi Corporation
AGL250V2-VQG100I
Microsemi Corporation
EP4SGX290NF45C2
Intel
5SGXEB6R2F43I2LN
Intel
5SGSMD5H3F35C2N
Intel
LFE2M50SE-5FN484C
Lattice Semiconductor Corporation
LFE2M20SE-5F484C
Lattice Semiconductor Corporation
EP20K1000CB652C7
Intel
5SGSMD3H2F35I2LN
Intel