Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / JAN1N5618US
Manufacturer Part Number | JAN1N5618US |
---|---|
Future Part Number | FT-JAN1N5618US |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/429 |
JAN1N5618US Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 3A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 2µs |
Current - Reverse Leakage @ Vr | 500nA @ 600V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, A |
Supplier Device Package | D-5A |
Operating Temperature - Junction | -65°C ~ 200°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN1N5618US Weight | Contact Us |
Replacement Part Number | JAN1N5618US-FT |
IRD3CH16DD6
Infineon Technologies
IRD3CH16DF6
Infineon Technologies
IRD3CH24DB6
Infineon Technologies
IRD3CH24DD6
Infineon Technologies
IRD3CH24DF6
Infineon Technologies
IRD3CH31DB6
Infineon Technologies
IRD3CH31DD6
Infineon Technologies
IRD3CH31DF6
Infineon Technologies
IRD3CH42DB6
Infineon Technologies
IRD3CH42DD6
Infineon Technologies
AX250-2FG484
Microsemi Corporation
M2GL025T-1VF400I
Microsemi Corporation
LCMXO640E-5FT256C
Lattice Semiconductor Corporation
5AGXBA5D4F27C4N
Intel
EP2SGX60EF1152C3N
Intel
LFE2-12SE-7F484C
Lattice Semiconductor Corporation
LCMXO2-7000HC-6BG256I
Lattice Semiconductor Corporation
EPF10K50VBI356-4
Intel
EPF6016QC208-2N
Intel
EP4SGX110FF35C4
Intel