Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / JAN1N5551US
Manufacturer Part Number | JAN1N5551US |
---|---|
Future Part Number | FT-JAN1N5551US |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/420 |
JAN1N5551US Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 400V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 1.2V @ 9A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 2µs |
Current - Reverse Leakage @ Vr | 1µA @ 400V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, B |
Supplier Device Package | D-5B |
Operating Temperature - Junction | -65°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN1N5551US Weight | Contact Us |
Replacement Part Number | JAN1N5551US-FT |
VSSAF5M12-M3/I
Vishay Semiconductor Diodes Division
VSSAF5M12HM3/H
Vishay Semiconductor Diodes Division
VSSAF5M12HM3/I
Vishay Semiconductor Diodes Division
VSSAF5M15-M3/H
Vishay Semiconductor Diodes Division
VSSAF5M15-M3/I
Vishay Semiconductor Diodes Division
VSSAF5M15HM3/H
Vishay Semiconductor Diodes Division
VSSAF5M15HM3/I
Vishay Semiconductor Diodes Division
VSSAF5M6-M3/I
Vishay Semiconductor Diodes Division
VSSAF5M6HM3/H
Vishay Semiconductor Diodes Division
VSSAF5M6HM3/I
Vishay Semiconductor Diodes Division
XCV1000E-6FG900I
Xilinx Inc.
A54SX72A-PQG208
Microsemi Corporation
AGL250V2-VQG100I
Microsemi Corporation
EP4SGX290NF45C2
Intel
5SGXEB6R2F43I2LN
Intel
5SGSMD5H3F35C2N
Intel
LFE2M50SE-5FN484C
Lattice Semiconductor Corporation
LFE2M20SE-5F484C
Lattice Semiconductor Corporation
EP20K1000CB652C7
Intel
5SGSMD3H2F35I2LN
Intel