Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IXYX200N65B3
Manufacturer Part Number | IXYX200N65B3 |
---|---|
Future Part Number | FT-IXYX200N65B3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | XPT™, GenX3™ |
IXYX200N65B3 Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 410A |
Current - Collector Pulsed (Icm) | 1100A |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 100A |
Power - Max | 1560W |
Switching Energy | 5mJ (on), 4mJ (off) |
Input Type | Standard |
Gate Charge | 340nC |
Td (on/off) @ 25°C | 60ns/370ns |
Test Condition | 400V, 100A, 0 Ohm, 15V |
Reverse Recovery Time (trr) | 108ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | PLUS247™-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXYX200N65B3 Weight | Contact Us |
Replacement Part Number | IXYX200N65B3-FT |
NGTD30T120F2WP
ON Semiconductor
NGTD13T65F2WP
ON Semiconductor
NGTD23T120F2SWK
ON Semiconductor
DGTD65T50S1PT
Diodes Incorporated
NGTD14T65F2WP
ON Semiconductor
NGTD28T65F2WP
ON Semiconductor
NGTD17T65F2WP
ON Semiconductor
DGTD65T60S2PT
Diodes Incorporated
NGTD23T120F2WP
ON Semiconductor
NGTD20T120F2WP
ON Semiconductor
XA2S50E-6TQ144I
Xilinx Inc.
LCMXO2-1200HC-5TG144I
Lattice Semiconductor Corporation
XC3S5000-4FGG676I
Xilinx Inc.
XCV150-4FG456I
Xilinx Inc.
A54SX72A-1FGG484
Microsemi Corporation
LFE2M70SE-5FN1152I
Lattice Semiconductor Corporation
EP3SE260F1152C4
Intel
A42MX16-FPQ160
Microsemi Corporation
LFE2-35SE-5F672C
Lattice Semiconductor Corporation
LCMXO640C-5BN256C
Lattice Semiconductor Corporation