Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTP1R6N50D2
Manufacturer Part Number | IXTP1R6N50D2 |
---|---|
Future Part Number | FT-IXTP1R6N50D2 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
IXTP1R6N50D2 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | 2.3 Ohm @ 800mA, 0V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 23.7nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 645pF @ 25V |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXTP1R6N50D2 Weight | Contact Us |
Replacement Part Number | IXTP1R6N50D2-FT |
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