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IXYS IXTM35N30

MFG Part Number
IXTM35N30
Available Quantity
91580 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
IXYS
Brief Description
GigaMOS™ POWER MOSFET TO-3
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IXTM35N30.pdf
IXTM35N30 Image

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IXTM35N30 Specifications

Manufacturer Part Number IXTM35N30
Future Part Number FT-IXTM35N30
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series GigaMOS™
IXTM35N30 Status (Lifecycle) In Stock
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-204AE
Package / Case TO-204AE
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IXTM35N30 Weight Contact Us
Replacement Part Number IXTM35N30-FT

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