Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTH67N10
Manufacturer Part Number | IXTH67N10 |
---|---|
Future Part Number | FT-IXTH67N10 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | MegaMOS™ |
IXTH67N10 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 33.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 (IXTH) |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXTH67N10 Weight | Contact Us |
Replacement Part Number | IXTH67N10-FT |
IXTH1N300P3HV
IXYS
IXTH2N300P3HV
IXYS
IXTH06N220P3HV
IXYS
IXTH1N170DHV
IXYS
IXTH1N200P3HV
IXYS
IXTH1N450HV
IXYS
IXTH200N10T
IXYS
IXTH76P10T
IXYS
IXTH90P10P
IXYS
IXTH30N60L2
IXYS
XC2S200-5FGG456I
Xilinx Inc.
AX1000-2FGG484
Microsemi Corporation
LCMXO640E-5FTN256C
Lattice Semiconductor Corporation
EP1S20F672I7
Intel
XC7VX980T-1FFG1930C
Xilinx Inc.
A42MX16-PQG160I
Microsemi Corporation
LFE2-50E-6F484I
Lattice Semiconductor Corporation
LCMXO3L-2100C-5BG256I
Lattice Semiconductor Corporation
LFE3-35EA-7FN672I
Lattice Semiconductor Corporation
10AX057K4F40I3SG
Intel