Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTD3N60P-2J
Manufacturer Part Number | IXTD3N60P-2J |
---|---|
Future Part Number | FT-IXTD3N60P-2J |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | PolarHV™ |
IXTD3N60P-2J Status (Lifecycle) | In Stock |
Part Status | Last Time Buy |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.9 Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 9.8nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 411pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 70W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXTD3N60P-2J Weight | Contact Us |
Replacement Part Number | IXTD3N60P-2J-FT |
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