Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTA1R6N100D2HV
Manufacturer Part Number | IXTA1R6N100D2HV |
---|---|
Future Part Number | FT-IXTA1R6N100D2HV |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
IXTA1R6N100D2HV Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 0V |
Rds On (Max) @ Id, Vgs | 10 Ohm @ 800mA, 0V |
Vgs(th) (Max) @ Id | 4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 645pF @ 10V |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263HV |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXTA1R6N100D2HV Weight | Contact Us |
Replacement Part Number | IXTA1R6N100D2HV-FT |
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