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IXYS IXTA1N200P3HV

MFG Part Number
IXTA1N200P3HV
Available Quantity
32060 Pieces
Reference Price
USD 5.264
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
IXYS
Brief Description
- MOSFET N-CH 2000V 1A TO-263HV
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IXTA1N200P3HV.pdf
IXTA1N200P3HV Image

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IXTA1N200P3HV Specifications

Manufacturer Part Number IXTA1N200P3HV
Future Part Number FT-IXTA1N200P3HV
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series -
IXTA1N200P3HV Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2000V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 646pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (IXTA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IXTA1N200P3HV Weight Contact Us
Replacement Part Number IXTA1N200P3HV-FT

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