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IXFT320N10T2 Image

IXYS IXFT320N10T2

MFG Part Number
IXFT320N10T2
Available Quantity
26820 Pieces
Reference Price
USD 9.664536
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
IXYS
Brief Description
GigaMOS™, HiPerFET™, TrenchT2™ MOSFET N-CH 100V 320A TO-26
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IXFT320N10T2.pdf
IXFT320N10T2 Image

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IXFT320N10T2 Specifications

Manufacturer Part Number IXFT320N10T2
Future Part Number FT-IXFT320N10T2
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series GigaMOS™, HiPerFET™, TrenchT2™
IXFT320N10T2 Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 320A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 430nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 26000pF @ 25V
FET Feature -
Power Dissipation (Max) 1000W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IXFT320N10T2 Weight Contact Us
Replacement Part Number IXFT320N10T2-FT

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