Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IXBX50N360HV
Manufacturer Part Number | IXBX50N360HV |
---|---|
Future Part Number | FT-IXBX50N360HV |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | BIMOSFET™ |
IXBX50N360HV Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 3600V |
Current - Collector (Ic) (Max) | 125A |
Current - Collector Pulsed (Icm) | 420A |
Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 50A |
Power - Max | 660W |
Switching Energy | - |
Input Type | Standard |
Gate Charge | 210nC |
Td (on/off) @ 25°C | 46ns/205ns |
Test Condition | 960V, 50A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | 1.7µs |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Variant |
Supplier Device Package | TO-247PLUS-HV |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXBX50N360HV Weight | Contact Us |
Replacement Part Number | IXBX50N360HV-FT |
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