Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IXBT10N170
Manufacturer Part Number | IXBT10N170 |
---|---|
Future Part Number | FT-IXBT10N170 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | BIMOSFET™ |
IXBT10N170 Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Current - Collector (Ic) (Max) | 20A |
Current - Collector Pulsed (Icm) | 40A |
Vce(on) (Max) @ Vge, Ic | 3.8V @ 15V, 10A |
Power - Max | 140W |
Switching Energy | 6mJ (off) |
Input Type | Standard |
Gate Charge | 30nC |
Td (on/off) @ 25°C | 35ns/500ns |
Test Condition | 1360V, 10A, 56 Ohm, 15V |
Reverse Recovery Time (trr) | 360ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package | TO-268 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXBT10N170 Weight | Contact Us |
Replacement Part Number | IXBT10N170-FT |
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