Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IXBR42N170
Manufacturer Part Number | IXBR42N170 |
---|---|
Future Part Number | FT-IXBR42N170 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | BIMOSFET™ |
IXBR42N170 Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Current - Collector (Ic) (Max) | 57A |
Current - Collector Pulsed (Icm) | 300A |
Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 42A |
Power - Max | 200W |
Switching Energy | - |
Input Type | Standard |
Gate Charge | 188nC |
Td (on/off) @ 25°C | - |
Test Condition | - |
Reverse Recovery Time (trr) | 1.32µs |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | ISOPLUS247™ |
Supplier Device Package | ISOPLUS247™ |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXBR42N170 Weight | Contact Us |
Replacement Part Number | IXBR42N170-FT |
IXYT25N250CHV
IXYS
IXYT80N90C3
IXYS
IXBT20N300
IXYS
IXGT4N250C
IXYS
IXA12IF1200TC
IXYS
IXA4IF1200TC
IXYS
IXBT32N300
IXYS
IXDT30N120
IXYS
IXGJ40N60C2D1
IXYS
IXGT12N120A2D1
IXYS
XC6SLX16-2FTG256I
Xilinx Inc.
XC7S75-2FGGA484I
Xilinx Inc.
AGLN250V2-ZCSG81I
Microsemi Corporation
M1A3P400-PQ208
Microsemi Corporation
LCMXO2280C-4FT256C
Lattice Semiconductor Corporation
LCMXO2-1200ZE-1UWG25ITR1K
Lattice Semiconductor Corporation
EPF10K100EFC484-1N
Intel
M2GL090S-1FGG676I
Microsemi Corporation
EP20K400CB652C7
Intel
EP1C12Q240C7
Intel