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Infineon Technologies IRLR3717PBF

MFG Part Number
IRLR3717PBF
Available Quantity
24860 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
HEXFET® MOSFET N-CH 20V 120A DPAK
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IRLR3717PBF.pdf
IRLR3717PBF Image

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IRLR3717PBF Specifications

Manufacturer Part Number IRLR3717PBF
Future Part Number FT-IRLR3717PBF
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series HEXFET®
IRLR3717PBF Status (Lifecycle) In Stock
Part Status Discontinued at Future Semiconductor
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2830pF @ 10V
FET Feature -
Power Dissipation (Max) 89W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IRLR3717PBF Weight Contact Us
Replacement Part Number IRLR3717PBF-FT

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