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Infineon Technologies IRLR3636PBF

MFG Part Number
IRLR3636PBF
Available Quantity
55910 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
HEXFET® MOSFET N-CH 60V 50A D-PAK
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IRLR3636PBF.pdf
IRLR3636PBF Image

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IRLR3636PBF Specifications

Manufacturer Part Number IRLR3636PBF
Future Part Number FT-IRLR3636PBF
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series HEXFET®
IRLR3636PBF Status (Lifecycle) In Stock
Part Status Discontinued at Future Semiconductor
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.8 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 49nC @ 4.5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3779pF @ 50V
FET Feature -
Power Dissipation (Max) 143W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IRLR3636PBF Weight Contact Us
Replacement Part Number IRLR3636PBF-FT

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