Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRLR2705PBF

| Manufacturer Part Number | IRLR2705PBF |
|---|---|
| Future Part Number | FT-IRLR2705PBF |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | HEXFET® |
| IRLR2705PBF Status (Lifecycle) | In Stock |
| Part Status | Discontinued at Future Semiconductor |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 5V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| IRLR2705PBF Weight | Contact Us |
| Replacement Part Number | IRLR2705PBF-FT |

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