Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRLML6402GTRPBF
Manufacturer Part Number | IRLML6402GTRPBF |
---|---|
Future Part Number | FT-IRLML6402GTRPBF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFET® |
IRLML6402GTRPBF Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 3.7A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 633pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Micro3™/SOT-23 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRLML6402GTRPBF Weight | Contact Us |
Replacement Part Number | IRLML6402GTRPBF-FT |
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