Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRLI640GPBF
Manufacturer Part Number | IRLI640GPBF |
---|---|
Future Part Number | FT-IRLI640GPBF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
IRLI640GPBF Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 9.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 5.9A, 5V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRLI640GPBF Weight | Contact Us |
Replacement Part Number | IRLI640GPBF-FT |
TJ15S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ20S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ30S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ40S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ50S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ60S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ60S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ80S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ8S06M3L(T6L1,NQ)
Toshiba Semiconductor and Storage
TK100S04N1L,LQ
Toshiba Semiconductor and Storage
XCS20XL-4VQ100C
Xilinx Inc.
XC6SLX150-3FG484I
Xilinx Inc.
A42MX36-1PQG240
Microsemi Corporation
A3P1000-2FGG484I
Microsemi Corporation
XC4020E-4HQ208I
Xilinx Inc.
XC7VX690T-1FFG1930C
Xilinx Inc.
A42MX09-TQ176
Microsemi Corporation
M1A3P1000L-FGG144
Microsemi Corporation
ICE40UL1K-CM36AITR1K
Lattice Semiconductor Corporation
EP4SGX230HF35C2
Intel