Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRLD110PBF
Manufacturer Part Number | IRLD110PBF |
---|---|
Future Part Number | FT-IRLD110PBF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
IRLD110PBF Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
Rds On (Max) @ Id, Vgs | 540 mOhm @ 600mA, 5V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.1nC @ 5V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Package / Case | 4-DIP (0.300", 7.62mm) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRLD110PBF Weight | Contact Us |
Replacement Part Number | IRLD110PBF-FT |
TK19A45D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK20A25D,S5Q(M
Toshiba Semiconductor and Storage
TK2A65D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK3A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage
TK3A65D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK3A65DA(STA4,QM)
Toshiba Semiconductor and Storage
TK4A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK4A53D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK4A55D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK4A55DA(STA4,Q,M)
Toshiba Semiconductor and Storage