Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFR12N25DTRLP
Manufacturer Part Number | IRFR12N25DTRLP |
---|---|
Future Part Number | FT-IRFR12N25DTRLP |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFET® |
IRFR12N25DTRLP Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 260 mOhm @ 8.4A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 810pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 144W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFR12N25DTRLP Weight | Contact Us |
Replacement Part Number | IRFR12N25DTRLP-FT |
GP1M009A020CG
Global Power Technologies Group
GP1M016A025CG
Global Power Technologies Group
GP1M018A020CG
Global Power Technologies Group
GP2M002A060CG
Global Power Technologies Group
GP2M002A065CG
Global Power Technologies Group
GP2M004A060CG
Global Power Technologies Group
GP2M004A065CG
Global Power Technologies Group
GP2M005A050CG
Global Power Technologies Group
GP2M005A060CG
Global Power Technologies Group
GP2M008A060CG
Global Power Technologies Group