Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFR120ZPBF
Manufacturer Part Number | IRFR120ZPBF |
---|---|
Future Part Number | FT-IRFR120ZPBF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFET® |
IRFR120ZPBF Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 5.2A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFR120ZPBF Weight | Contact Us |
Replacement Part Number | IRFR120ZPBF-FT |
FQD9N25TM-F085
ON Semiconductor
GP1M003A040CG
Global Power Technologies Group
GP1M003A050CG
Global Power Technologies Group
GP1M003A080CH
Global Power Technologies Group
GP1M003A090C
Global Power Technologies Group
GP1M005A040CG
Global Power Technologies Group
GP1M005A050CH
Global Power Technologies Group
GP1M006A065CH
Global Power Technologies Group
GP1M007A065CG
Global Power Technologies Group
GP1M008A025CG
Global Power Technologies Group