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Infineon Technologies IRFL4105PBF

MFG Part Number
IRFL4105PBF
Available Quantity
12980 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
HEXFET® MOSFET N-CH 55V 3.7A SOT223
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IRFL4105PBF.pdf
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IRFL4105PBF Specifications

Manufacturer Part Number IRFL4105PBF
Future Part Number FT-IRFL4105PBF
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series HEXFET®
IRFL4105PBF Status (Lifecycle) In Stock
Part Status Discontinued at Future Semiconductor
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 45 mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 25V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IRFL4105PBF Weight Contact Us
Replacement Part Number IRFL4105PBF-FT

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