Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFIZ14GPBF
Manufacturer Part Number | IRFIZ14GPBF |
---|---|
Future Part Number | FT-IRFIZ14GPBF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
IRFIZ14GPBF Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 4.8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 27W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFIZ14GPBF Weight | Contact Us |
Replacement Part Number | IRFIZ14GPBF-FT |
SSR1N60BTM-WS
ON Semiconductor
SSR1N60BTM_F080
ON Semiconductor
TJ10S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ15S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ20S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ30S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ40S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ50S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ60S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ60S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage