Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFI530GPBF
Manufacturer Part Number | IRFI530GPBF |
---|---|
Future Part Number | FT-IRFI530GPBF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
IRFI530GPBF Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 670pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 42W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFI530GPBF Weight | Contact Us |
Replacement Part Number | IRFI530GPBF-FT |
SSR1N60BTM_F080
ON Semiconductor
TJ10S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ15S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ20S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ30S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ40S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ50S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ60S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ60S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ80S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
LCMXO2-640HC-4SG48C
Lattice Semiconductor Corporation
A54SX32A-1TQG144
Microsemi Corporation
XC6SLX75T-4FGG484C
Xilinx Inc.
A3P600L-1FGG484
Microsemi Corporation
MPF300T-FCG1152E
Microsemi Corporation
A40MX04-FPL68
Microsemi Corporation
AGLN250V5-VQ100I
Microsemi Corporation
5SGXMA7N2F45C3N
Intel
LFXP6E-3Q208C
Lattice Semiconductor Corporation
5SGSMD4H3F35C4N
Intel