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Infineon Technologies IRFH5110TR2PBF

Name: IRFH5110TR2PBF
Brand: Infineon Technologies
SKU: IRFH5110TR2PBF
Availability: InStock
Rating: 4.8 (695 reviews)

MFG Part Number: IRFH5110TR2PBF

Available Quantity: 34540 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: HEXFET® MOSFET N-CH 100V 5X6 PQFN

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IRFH5110TR2PBF.pdf

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IRFH5110TR2PBF Specifications

Manufacturer Part Number	IRFH5110TR2PBF
Future Part Number	FT-IRFH5110TR2PBF
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	HEXFET®
IRFH5110TR2PBF Status (Lifecycle)	In Stock
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	12.4 mOhm @ 37A, 10V
Vgs(th) (Max) @ Id	4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3152pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.6W (Ta), 114W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN (5x6)
Package / Case	8-PowerVDFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IRFH5110TR2PBF Weight	Contact Us
Replacement Part Number	IRFH5110TR2PBF-FT

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