Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFD123PBF
Manufacturer Part Number | IRFD123PBF |
---|---|
Future Part Number | FT-IRFD123PBF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
IRFD123PBF Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 270 mOhm @ 780mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Package / Case | 4-DIP (0.300", 7.62mm) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFD123PBF Weight | Contact Us |
Replacement Part Number | IRFD123PBF-FT |
TK5A55D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK5A60D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK5A65D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK5A65DA(STA4,Q,M)
Toshiba Semiconductor and Storage
TK6A45DA(STA4,Q,M)
Toshiba Semiconductor and Storage
TK6A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK6A53D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK6A55DA(STA4,Q,M)
Toshiba Semiconductor and Storage
TK7A45DA(STA4,Q,M)
Toshiba Semiconductor and Storage
TK7A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
XC6SLX150T-2CSG484I
Xilinx Inc.
M2GL010-FGG484I
Microsemi Corporation
A54SX32A-CQ256M
Microsemi Corporation
A3PN250-2VQ100
Microsemi Corporation
5SGXEA5K2F40I3L
Intel
5SGXMA9N2F45C2LN
Intel
XC7VX690T-1FF1157I
Xilinx Inc.
XC4VLX160-10FF1148C
Xilinx Inc.
XC2V8000-4FFG1152I
Xilinx Inc.
XC2V1500-5FF896I
Xilinx Inc.