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Infineon Technologies IRFB4110GPBF

MFG Part Number
IRFB4110GPBF
Available Quantity
11230 Pieces
Reference Price
USD 3.664
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
HEXFET® MOSFET N-CH 100V 120A TO220AB
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IRFB4110GPBF.pdf
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IRFB4110GPBF Specifications

Manufacturer Part Number IRFB4110GPBF
Future Part Number FT-IRFB4110GPBF
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series HEXFET®
IRFB4110GPBF Status (Lifecycle) In Stock
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9620pF @ 50V
FET Feature -
Power Dissipation (Max) 370W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IRFB4110GPBF Weight Contact Us
Replacement Part Number IRFB4110GPBF-FT

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