Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFB4110GPBF
Manufacturer Part Number | IRFB4110GPBF |
---|---|
Future Part Number | FT-IRFB4110GPBF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFET® |
IRFB4110GPBF Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 210nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 9620pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 370W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFB4110GPBF Weight | Contact Us |
Replacement Part Number | IRFB4110GPBF-FT |
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