Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / IRF9952PBF
Manufacturer Part Number | IRF9952PBF |
---|---|
Future Part Number | FT-IRF9952PBF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFET® |
IRF9952PBF Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.5A, 2.3A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF9952PBF Weight | Contact Us |
Replacement Part Number | IRF9952PBF-FT |
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