Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF8306MTR1PBF
Manufacturer Part Number | IRF8306MTR1PBF |
---|---|
Future Part Number | FT-IRF8306MTR1PBF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFET® |
IRF8306MTR1PBF Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 140A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 4.5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4110pF @ 15V |
FET Feature | Schottky Diode (Body) |
Power Dissipation (Max) | 2.1W (Ta), 75W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET™ MX |
Package / Case | DirectFET™ Isometric MX |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF8306MTR1PBF Weight | Contact Us |
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