Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF7473PBF
Manufacturer Part Number | IRF7473PBF |
---|---|
Future Part Number | FT-IRF7473PBF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFET® |
IRF7473PBF Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 4.1A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 61nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3180pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF7473PBF Weight | Contact Us |
Replacement Part Number | IRF7473PBF-FT |
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