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Infineon Technologies IRF6709S2TRPBF

MFG Part Number
IRF6709S2TRPBF
Available Quantity
26110 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
HEXFET® MOSFET N-CH 25V 12A DIRECTFET-S1
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IRF6709S2TRPBF.pdf
IRF6709S2TRPBF Image

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IRF6709S2TRPBF Specifications

Manufacturer Part Number IRF6709S2TRPBF
Future Part Number FT-IRF6709S2TRPBF
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series HEXFET®
IRF6709S2TRPBF Status (Lifecycle) In Stock
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.8 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 13V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 21W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET S1
Package / Case DirectFET™ Isometric S1
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IRF6709S2TRPBF Weight Contact Us
Replacement Part Number IRF6709S2TRPBF-FT

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