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Infineon Technologies IRF6662TR1PBF

Name: IRF6662TR1PBF
Brand: Infineon Technologies
SKU: IRF6662TR1PBF
Availability: InStock
Rating: 4.7 (550 reviews)

MFG Part Number: IRF6662TR1PBF

Available Quantity: 12430 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: HEXFET® MOSFET N-CH 100V 8.3A DIRECTFET

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IRF6662TR1PBF.pdf

IRF6662TR1PBF Specifications

Manufacturer Part Number	IRF6662TR1PBF
Future Part Number	FT-IRF6662TR1PBF
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	HEXFET®
IRF6662TR1PBF Status (Lifecycle)	In Stock
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	8.3A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	22 mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id	4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1360pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET™ MZ
Package / Case	DirectFET™ Isometric MZ
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IRF6662TR1PBF Weight	Contact Us
Replacement Part Number	IRF6662TR1PBF-FT

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