Manufacturer Part Number | IRF6609 |
---|---|
Future Part Number | FT-IRF6609 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFET® |
IRF6609 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 150A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2 mOhm @ 31A, 10V |
Vgs(th) (Max) @ Id | 2.45V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 69nC @ 4.5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6290pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta), 89W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET™ MT |
Package / Case | DirectFET™ Isometric MT |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF6609 Weight | Contact Us |
Replacement Part Number | IRF6609-FT |
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