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Infineon Technologies IRF6609TR1PBF

MFG Part Number
IRF6609TR1PBF
Available Quantity
86800 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
HEXFET® MOSFET N-CH 20V 31A DIRECTFET
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IRF6609TR1PBF.pdf
IRF6609TR1PBF Image

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IRF6609TR1PBF Specifications

Manufacturer Part Number IRF6609TR1PBF
Future Part Number FT-IRF6609TR1PBF
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series HEXFET®
IRF6609TR1PBF Status (Lifecycle) In Stock
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2 mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 69nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6290pF @ 10V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MT
Package / Case DirectFET™ Isometric MT
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IRF6609TR1PBF Weight Contact Us
Replacement Part Number IRF6609TR1PBF-FT

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