Manufacturer Part Number | IRF6601 |
---|---|
Future Part Number | FT-IRF6601 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFET® |
IRF6601 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 4.5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3440pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 3.6W (Ta), 42W (Tc) |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET™ MT |
Package / Case | DirectFET™ Isometric MT |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF6601 Weight | Contact Us |
Replacement Part Number | IRF6601-FT |
IRF6635TRPBF
Infineon Technologies
IRF6638TR1PBF
Infineon Technologies
IRF6638TRPBF
Infineon Technologies
IRF6678TR1
Infineon Technologies
IRF6678TR1PBF
Infineon Technologies
IRF6678TRPBF
Infineon Technologies
IRF6714MTR1PBF
Infineon Technologies
IRF6714MTRPBF
Infineon Technologies
IRF6715MTR1PBF
Infineon Technologies
IRF6715MTRPBF
Infineon Technologies
A1010B-2VQ80I
Microsemi Corporation
EPF10K30ATC144-1
Intel
XC3S500E-4PQ208I
Xilinx Inc.
AFS090-2FG256I
Microsemi Corporation
AGL1000V5-FGG256I
Microsemi Corporation
LCMXO3L-4300C-5BG324I
Lattice Semiconductor Corporation
EP2C20F484C6
Intel
10AX022E3F29I2LG
Intel
5CGXBC9A7U19C8N
Intel
EP4CE75F29C8
Intel