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Infineon Technologies IRF5210LPBF

MFG Part Number
IRF5210LPBF
Available Quantity
41520 Pieces
Reference Price
USD 2.352
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
HEXFET® MOSFET P-CH 100V 38A TO-262
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IRF5210LPBF.pdf
IRF5210LPBF Image

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IRF5210LPBF Specifications

Manufacturer Part Number IRF5210LPBF
Future Part Number FT-IRF5210LPBF
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series HEXFET®
IRF5210LPBF Status (Lifecycle) In Stock
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60 mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2780pF @ 25V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IRF5210LPBF Weight Contact Us
Replacement Part Number IRF5210LPBF-FT

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