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Infineon Technologies IRF3808STRRPBF

Name: IRF3808STRRPBF
Brand: Infineon Technologies
SKU: IRF3808STRRPBF
Price: 1.3596 USD
Availability: InStock
Rating: 4.8 (629 reviews)

MFG Part Number: IRF3808STRRPBF

Available Quantity: 41110 Pieces

Reference Price: USD 1.3596

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: HEXFET® MOSFET N-CH 75V 106A D2PAK

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IRF3808STRRPBF.pdf

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IRF3808STRRPBF Specifications

Manufacturer Part Number	IRF3808STRRPBF
Future Part Number	FT-IRF3808STRRPBF
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	HEXFET®
IRF3808STRRPBF Status (Lifecycle)	In Stock
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25°C	106A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	7 mOhm @ 82A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	220nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5310pF @ 25V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IRF3808STRRPBF Weight	Contact Us
Replacement Part Number	IRF3808STRRPBF-FT

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