Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF2807STRRPBF
Manufacturer Part Number | IRF2807STRRPBF |
---|---|
Future Part Number | FT-IRF2807STRRPBF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFET® |
IRF2807STRRPBF Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 43A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3820pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 230W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF2807STRRPBF Weight | Contact Us |
Replacement Part Number | IRF2807STRRPBF-FT |
IPB80N06S208ATMA2
Infineon Technologies
IPB80N06S209ATMA1
Infineon Technologies
IPB80N06S209ATMA2
Infineon Technologies
IPB80N06S2H5ATMA1
Infineon Technologies
IPB80N06S2L-H5
Infineon Technologies
IPB80N06S2L05ATMA1
Infineon Technologies
IPB80N06S2L06ATMA1
Infineon Technologies
IPB80N06S2L06ATMA2
Infineon Technologies
IPB80N06S2L07ATMA1
Infineon Technologies
IPB80N06S2L07ATMA3
Infineon Technologies
M2GL025-1FG484I
Microsemi Corporation
APA600-BG456M
Microsemi Corporation
APA450-FG256
Microsemi Corporation
A3P400-1FG256
Microsemi Corporation
XC2V4000-4FFG1152I
Xilinx Inc.
LFE2M20E-6FN256I
Lattice Semiconductor Corporation
LCMXO2-1200UHC-4FTG256I
Lattice Semiconductor Corporation
LCMXO2-4000HC-6MG132C
Lattice Semiconductor Corporation
EP3SE110F780C4L
Intel
10CL080YF780C6G
Intel