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Infineon Technologies IRF200B211

MFG Part Number
IRF200B211
Available Quantity
50080 Pieces
Reference Price
USD 0.928
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
HEXFET®, StrongIRFET™ MOSFET N-CH 200V 12A TO-220AB
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IRF200B211.pdf
IRF200B211 Image

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IRF200B211 Specifications

Manufacturer Part Number IRF200B211
Future Part Number FT-IRF200B211
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series HEXFET®, StrongIRFET™
IRF200B211 Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170 mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id 4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IRF200B211 Weight Contact Us
Replacement Part Number IRF200B211-FT

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