Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF200B211
Manufacturer Part Number | IRF200B211 |
---|---|
Future Part Number | FT-IRF200B211 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFET®, StrongIRFET™ |
IRF200B211 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 7.2A, 10V |
Vgs(th) (Max) @ Id | 4.9V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 80W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF200B211 Weight | Contact Us |
Replacement Part Number | IRF200B211-FT |
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