Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF1010EZS
Manufacturer Part Number | IRF1010EZS |
---|---|
Future Part Number | FT-IRF1010EZS |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFET® |
IRF1010EZS Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 51A, 10V |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2810pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRF1010EZS Weight | Contact Us |
Replacement Part Number | IRF1010EZS-FT |
IPB65R045C7ATMA2
Infineon Technologies
IPB65R065C7ATMA1
Infineon Technologies
IPB65R095C7ATMA1
Infineon Technologies
IPB65R095C7ATMA2
Infineon Technologies
IPB65R099C6ATMA1
Infineon Technologies
IPB65R110CFDAATMA1
Infineon Technologies
IPB65R110CFDATMA1
Infineon Technologies
IPB65R125C7ATMA1
Infineon Technologies
IPB65R125C7ATMA2
Infineon Technologies
IPB65R150CFDAATMA1
Infineon Technologies
XCV200-5FG256I
Xilinx Inc.
APA150-FGG256
Microsemi Corporation
M7A3P1000-FGG256I
Microsemi Corporation
A40MX04-1PL68
Microsemi Corporation
EP1M350F780C6
Intel
LCMXO2-2000HE-6FTG256C
Lattice Semiconductor Corporation
LFXP2-40E-6FN484I
Lattice Semiconductor Corporation
10AX066H1F34I1SG
Intel
EP1C6Q240C7N
Intel
EP1K100QC208-1GZ
Intel