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Infineon Technologies IPT111N20NFDATMA1

MFG Part Number
IPT111N20NFDATMA1
Available Quantity
47540 Pieces
Reference Price
USD 3.338992
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
OptiMOS™ MOSFET N-CH 200V 96A HSOF-8
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IPT111N20NFDATMA1.pdf
IPT111N20NFDATMA1 Image

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IPT111N20NFDATMA1 Specifications

Manufacturer Part Number IPT111N20NFDATMA1
Future Part Number FT-IPT111N20NFDATMA1
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series OptiMOS™
IPT111N20NFDATMA1 Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11.1 mOhm @ 96A, 10V
Vgs(th) (Max) @ Id 4V @ 267µA
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 100V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IPT111N20NFDATMA1 Weight Contact Us
Replacement Part Number IPT111N20NFDATMA1-FT

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