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Infineon Technologies IPT111N20NFDATMA1

Name: IPT111N20NFDATMA1
Brand: Infineon Technologies
SKU: IPT111N20NFDATMA1
Price: 3.338992 USD
Availability: InStock
Rating: 4.6 (673 reviews)

MFG Part Number: IPT111N20NFDATMA1

Available Quantity: 47540 Pieces

Reference Price: USD 3.338992

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 200V 96A HSOF-8

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPT111N20NFDATMA1.pdf

IPT111N20NFDATMA1 Specifications

Manufacturer Part Number	IPT111N20NFDATMA1
Future Part Number	FT-IPT111N20NFDATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
IPT111N20NFDATMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11.1 mOhm @ 96A, 10V
Vgs(th) (Max) @ Id	4V @ 267µA
Gate Charge (Qg) (Max) @ Vgs	87nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7000pF @ 100V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-1
Package / Case	8-PowerSFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPT111N20NFDATMA1 Weight	Contact Us
Replacement Part Number	IPT111N20NFDATMA1-FT

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